Electrical Characteristics and Chemical Stability of Non-Oxidized, Methyl-Terminated Silicon Nanowires

Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2006-07, Vol.128 (28), p.8990-8991
Main Authors: Haick, Hossam, Hurley, Patrick T, Hochbaum, Allon I, Yang, Peidong, Lewis, Nathan S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in mesoscopic or nanoscale materials and structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
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Summary:Silicon nanowires (Si NWs) modified by covalent Si−CH3 functionality, with no intervening oxide, show atmospheric stability, high conductance values, low surface defect levels, and allow for the formation of air-stable Si NW Field-Effect Transistors (FETs) having on−off ratios in excess of 105 over a relatively small gate voltage swing (±2 V).
ISSN:0002-7863
1520-5126
DOI:10.1021/ja056785w