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Electrochemical Fabrication of Nanodimensional Multilayer Films
A novel method of fabricating nanodimensional multilayer films using electrochemistry is described. A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta2O5 layer. The rate of Ta consumption, the rate of Ta2O5...
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Published in: | Nano letters 2005-10, Vol.5 (10), p.1899-1904 |
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container_end_page | 1904 |
container_issue | 10 |
container_start_page | 1899 |
container_title | Nano letters |
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creator | Mardilovich, Peter Kornilovitch, Pavel |
description | A novel method of fabricating nanodimensional multilayer films using electrochemistry is described. A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta2O5 layer. The rate of Ta consumption, the rate of Ta2O5 expansion, and the dependence of Ta2O5 thickness on anodization conditions have been carefully characterized to enable accurate predictions of the resulting thicknesses of both layers. Due to strong planarization action of the anodization process, the resulting interfaces Ta/Ta2O5 and Ta2O5/electrolyte are remarkably smooth. The next layer of Ta is deposited on top of Ta2O5, and the process is repeated as many times as needed. The Ta2O5 layers are amorphous and pinhole free. We report fabrication of 10-layer structures with pitches ranging from 200 nm down to 12 nm and with excellent uniformity between the layers. The smallest achieved thickness of Ta layers is only 2.8 ± 0.1 nm. The edges of such films, after proper polishing and etching, could serve as templates in nanoimprint lithography and in other applications. |
doi_str_mv | 10.1021/nl0511925 |
format | article |
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A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta2O5 layer. The rate of Ta consumption, the rate of Ta2O5 expansion, and the dependence of Ta2O5 thickness on anodization conditions have been carefully characterized to enable accurate predictions of the resulting thicknesses of both layers. Due to strong planarization action of the anodization process, the resulting interfaces Ta/Ta2O5 and Ta2O5/electrolyte are remarkably smooth. The next layer of Ta is deposited on top of Ta2O5, and the process is repeated as many times as needed. The Ta2O5 layers are amorphous and pinhole free. We report fabrication of 10-layer structures with pitches ranging from 200 nm down to 12 nm and with excellent uniformity between the layers. The smallest achieved thickness of Ta layers is only 2.8 ± 0.1 nm. The edges of such films, after proper polishing and etching, could serve as templates in nanoimprint lithography and in other applications.</description><identifier>ISSN: 1530-6984</identifier><identifier>EISSN: 1530-6992</identifier><identifier>DOI: 10.1021/nl0511925</identifier><identifier>PMID: 16218706</identifier><language>eng</language><publisher>Washington, DC: American Chemical Society</publisher><subject>Applied sciences ; Condensed matter: structure, mechanical and thermal properties ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals ; Physics ; Semiconductor electronics. Microelectronics. Optoelectronics. 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A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta2O5 layer. The rate of Ta consumption, the rate of Ta2O5 expansion, and the dependence of Ta2O5 thickness on anodization conditions have been carefully characterized to enable accurate predictions of the resulting thicknesses of both layers. Due to strong planarization action of the anodization process, the resulting interfaces Ta/Ta2O5 and Ta2O5/electrolyte are remarkably smooth. The next layer of Ta is deposited on top of Ta2O5, and the process is repeated as many times as needed. The Ta2O5 layers are amorphous and pinhole free. We report fabrication of 10-layer structures with pitches ranging from 200 nm down to 12 nm and with excellent uniformity between the layers. The smallest achieved thickness of Ta layers is only 2.8 ± 0.1 nm. The edges of such films, after proper polishing and etching, could serve as templates in nanoimprint lithography and in other applications.</description><subject>Applied sciences</subject><subject>Condensed matter: structure, mechanical and thermal properties</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals</subject><subject>Physics</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. 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Microelectronics. Optoelectronics. Solid state devices</topic><topic>Structure of solids and liquids; crystallography</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mardilovich, Peter</creatorcontrib><creatorcontrib>Kornilovitch, Pavel</creatorcontrib><collection>Pascal-Francis</collection><collection>PubMed</collection><collection>CrossRef</collection><collection>MEDLINE - Academic</collection><jtitle>Nano letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mardilovich, Peter</au><au>Kornilovitch, Pavel</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrochemical Fabrication of Nanodimensional Multilayer Films</atitle><jtitle>Nano letters</jtitle><addtitle>Nano Lett</addtitle><date>2005-10-01</date><risdate>2005</risdate><volume>5</volume><issue>10</issue><spage>1899</spage><epage>1904</epage><pages>1899-1904</pages><issn>1530-6984</issn><eissn>1530-6992</eissn><abstract>A novel method of fabricating nanodimensional multilayer films using electrochemistry is described. A thin layer of tantalum (Ta) is sputtered on a smooth insulating substrate. Ta is partially electrochemically oxidized (anodized) forming a Ta2O5 layer. The rate of Ta consumption, the rate of Ta2O5 expansion, and the dependence of Ta2O5 thickness on anodization conditions have been carefully characterized to enable accurate predictions of the resulting thicknesses of both layers. Due to strong planarization action of the anodization process, the resulting interfaces Ta/Ta2O5 and Ta2O5/electrolyte are remarkably smooth. The next layer of Ta is deposited on top of Ta2O5, and the process is repeated as many times as needed. The Ta2O5 layers are amorphous and pinhole free. We report fabrication of 10-layer structures with pitches ranging from 200 nm down to 12 nm and with excellent uniformity between the layers. The smallest achieved thickness of Ta layers is only 2.8 ± 0.1 nm. The edges of such films, after proper polishing and etching, could serve as templates in nanoimprint lithography and in other applications.</abstract><cop>Washington, DC</cop><pub>American Chemical Society</pub><pmid>16218706</pmid><doi>10.1021/nl0511925</doi><tpages>6</tpages></addata></record> |
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subjects | Applied sciences Condensed matter: structure, mechanical and thermal properties Electronics Exact sciences and technology Microelectronic fabrication (materials and surfaces technology) Nanoscale materials: clusters, nanoparticles, nanotubes, and nanocrystals Physics Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Structure of solids and liquids crystallography |
title | Electrochemical Fabrication of Nanodimensional Multilayer Films |
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