Effect of focal spot size on in-band 13.5 nm extreme ultraviolet emission from laser-produced Sn plasma

The effect of focal spot size on in-band 13.5 nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5 nm EUV light was noted with focal spot sizes from 60 to 500 microm...

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Bibliographic Details
Published in:Optics letters 2006-08, Vol.31 (16), p.2492-2494
Main Authors: TAO, Y, HARILAL, S. S, TILLACK, M. S, SEQUOIA, K. L, O'SHAY, B, NAJMABADI, F
Format: Article
Language:English
Subjects:
Exact sciences and technology
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Interferometers
Optical instruments, equipment and techniques
Physics
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Summary:The effect of focal spot size on in-band 13.5 nm extreme ultraviolet (EUV) emission from laser-produced Sn plasmas was investigated for an EUV lithography light source. Almost constant in-band conversion efficiency from laser to 13.5 nm EUV light was noted with focal spot sizes from 60 to 500 microm. This effect may be explained by the opacity of Sn plasmas. Optical interferometry showed that the EUV emission must pass through a longer plasma with higher density when the focal spot is large, and strong reabsorption of EUV light was confirmed by a dip located at 13.5 nm in the spectrum.
ISSN:0146-9592
1539-4794
DOI:10.1364/ol.31.002492