1-Imino Nitroxide Pyrene for High Performance Organic Field-Effect Transistors with Low Operating Voltage

Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to t...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2006-10, Vol.128 (40), p.13058-13059
Main Authors: Wang, Ying, Wang, Hongmei, Liu, Yunqi, Di, Chong-an, Sun, Yanming, Wu, Weiping, Yu, Gui, Zhang, Deqing, Zhu, Daoben
Format: Article
Language:English
Subjects:
Chemistry
Condensed benzenic and aromatic compounds
Exact sciences and technology
General and physical chemistry
Organic chemistry
Preparations and properties
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Summary:Organic field-effect transistors (OFETs) fabricated with vapor-deposited films of 1-imino nitroxide pyrene show excellent p-type FET characteristics, with mobility up to 0.1 cm2 V-1 s-1 and an on/off ratio of nearly 5 × 104. Most remarkable feature of the FETs is their low operating voltage due to the low threshold voltage (about −0.6 V) and inverse subthreshold slope (about 540 mV decade-1).
ISSN:0002-7863
1520-5126
DOI:10.1021/ja064580x