Time-resolved reflectance and transmittance measurements of laser-induced free carriers in germanium, silicon, and zinc selenide at 10.6 microm

We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and 532 nm wavelength l...

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Bibliographic Details
Published in:Applied optics (2004) 2007-02, Vol.46 (5), p.785-788
Main Authors: Toyoda, Yoshimasa, Elias, Luis R, Yen, William M
Format: Article
Language:English
Online Access:Get full text
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Summary:We present experimental results of reflectance and transmittance measurements of infrared radiation by high-density photogenerated free carriers in polycrystalline germanium, polycrystalline silicon, and chemical vapor deposition zinc selenide windows. Linearly polarized 1064 and 532 nm wavelength light from a Nd:YAG laser with a 130 ps pulse width were used to generate free carriers in the samples. Reflectance and transmittance were measured at a 10.6 microm wavelength using a linearly polarized CO2 laser.
ISSN:1559-128X