Current-driven phase oscillation and domain-wall propagation in WxV1-xO2 nanobeams

We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I...

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Bibliographic Details
Published in:Nano letters 2007-02, Vol.7 (2), p.363-366
Main Authors: Gu, Qian, Falk, Abram, Wu, Junqiao, Ouyang, Lian, Park, Hongkun
Format: Article
Language:English
Online Access:Get full text
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Summary:We report the observation of a current-driven metal (M)-insulator (I) phase oscillation in two-terminal devices incorporating individual WxV1-xO2 nanobeams connected to parallel shunt capacitors. The frequency of the phase oscillation reaches above 5 MHz for approximately 1 mum long devices. The M-I phase oscillation, which coincides with the charging/discharging of the capacitor, occurs through the axial drift of a single M-I domain wall driven by Joule heating and the Peltier effect.
ISSN:1530-6984
DOI:10.1021/nl0624768