Photoelectrochemical reaction and H2 generation at zero bias optimized by carrier concentration of n-type GaN

The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation a...

Full description

Saved in:
Bibliographic Details
Published in:The Journal of chemical physics 2007-02, Vol.126 (5), p.054708-054708
Main Authors: Ono, Masato, Fujii, Katsushi, Ito, Takashi, Iwaki, Yasuhiro, Hirako, Akira, Yao, Takafumi, Ohkawa, Kazuhiro
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The authors studied the photoelectrochemical properties dependent on carrier concentration of n-type GaN. The photocurrent at zero bias became the maximum value at the carrier concentration of 1.7x10(17) cm-3. Using the sample optimized carrier concentration, the authors achieved H2 gas generation at a Pt counterelectrode without extra bias for the first time. The authors also discussed the mechanism of the dependence of photocurrent on the carrier concentration of GaN.
ISSN:0021-9606
1089-7690
DOI:10.1063/1.2432116