Spin polarization dependence of carrier effective mass in semiconductor structures : Spintronic effective mass

We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass r...

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Bibliographic Details
Published in:Physical review letters 2005-12, Vol.95 (25), p.256603.1-256603.4, Article 256603
Main Authors: YING ZHANG, DAS SARMA, S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Physics
Spin polarized transport
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Summary:We introduce the concept of a spintronic effective mass for spin-polarized carriers in semiconductor structures, which arises from the strong spin-polarization dependence of the renormalized effective mass in an interacting spin-polarized electron system. The majority-spin many-body effective mass renormalization differs by more than a factor of 2 at r(s) = 5 between the unpolarized and the fully polarized two-dimensional system, whereas the polarization dependence (approximately 15%) is more modest in three dimensions around metallic densities (r(s) approximately 5). The spin-polarization dependence of the carrier effective mass is of significance in various spintronic applications.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.95.256603