All-semiconductor room-temperature terahertz time domain spectrometer

We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive...

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Bibliographic Details
Published in:Optics letters 2008-09, Vol.33 (18), p.2125-2127
Main Authors: MIHOUBI, Zakaria, WILCOX, Keith G, ELSMERE, Stephen, QUARTERMAN, Adrian, RUNGSAWANG, Rakchanok, FARRER, Ian, BEERE, Harvey E, RITCHIE, David A, TROPPER, Anne, APOSTOLOPOULOS, Vasileios
Format: Article
Language:English
Subjects:
Biological and medical applications
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Infrared spectrometers, auxiliary equipment and techniques
Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Laser spectroscopy
Optics
Physics
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Summary:We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 mum-gap bow-tie-shaped electrodes. The coherently detected spectrum has a bandwidth close to 1 THz, in which water absorption lines at 0.555 and 0.751 THz can be resolved.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.33.002125