Hydrogen defect-level pinning in semiconductors: the muonium equivalent

We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transitio...

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Bibliographic Details
Published in:Physical review letters 2008-09, Vol.101 (13), p.136403-136403
Main Authors: Lichti, R L, Chow, K H, Cox, S F J
Format: Article
Language:English
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Summary:We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transition level Mu(+/-) to within experimental uncertainties. However, this is nearly 0.5 eV higher than the energy at which the equivalent level for hydrogen was predicted to be pinned. Corrections for zero-point energy account for only about 10% of this difference. We also report experimental results for the (negative-U) difference between donor and acceptor levels for Mu to be compared with calculated values for H impurities in the same materials.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.101.136403