Piezoelectric-Potential-Controlled Polarity-Reversible Schottky Diodes and Switches of ZnO Wires

• Published in: Nano letters 2008-11, Vol.8 (11), p.3973-3977
• Main Authors: Zhou, Jun, Fei, Peng, Gu, Yudong, Mai, Wenjie, Gao, Yifan, Yang, Rusen, Bao, Gang, Wang, Zhong Lin
• Format: Article
• Language: English
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Electron and ion emission by liquids and solids; impact phenomena; Electronics; Electrons; Exact sciences and technology; Interfaces; Lasers, Semiconductor; Materials science; Nanocrystalline materials; Nanoscale materials and structures: fabrication and characterization; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Thermionic emission; Zinc Oxide - chemistry
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/nl802497e

Using a two-end bonded ZnO piezoelectric-fine-wire (PFW) (nanowire, microwire) on a flexible polymer substrate, the strain-induced change in I−V transport characteristic from symmetric to diode-type has been observed. This phenomenon is attributed to the asymmetric change in Schottky-barrier heights at both source and drain electrodes as caused by the strain-induced piezoelectric potential-drop along the PFW, which have been quantified using the thermionic emission−diffusion theory. A new piezotronic switch device with an “on” and “off” ratio of ∼120 has been demonstrated. This work demonstrates a novel approach for fabricating diodes and switches that rely on a strain governed piezoelectric-semiconductor coupling process.