Lateral shearing interferometer for measuring photoinduced refractive index change in As(2)S(3)

We have built and demonstrated a lateral shearing interferometer as a process engineering and control tool for the fabrication and characterization of direct-laser-written waveguide structures in chalcogenide glasses. Photoinduced change in refractive index of 0.154+/-0.002 was measured for as-depos...

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Bibliographic Details
Published in:Review of scientific instruments 2008-09, Vol.79 (9), p.095101-095101
Main Authors: Krishnaswami, Kannan, Bernacki, Bruce E, Hô, Nicolas, Allen, Paul J, Anheier, Norman C
Format: Article
Language:English
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Summary:We have built and demonstrated a lateral shearing interferometer as a process engineering and control tool for the fabrication and characterization of direct-laser-written waveguide structures in chalcogenide glasses. Photoinduced change in refractive index of 0.154+/-0.002 was measured for as-deposited amorphous As(2)S(3) thin films at 633 nm with an estimated measurement uncertainty of 1.3% for this air-gap interferometer configuration. The simple design of this interferometer can easily be adapted to other wavelengths including mid- and long-wave infrared regions to measure changes in refractive index or material inhomogeneities in transmissive materials.
ISSN:1089-7623
DOI:10.1063/1.2973640