Impact of Coulomb scattering on the ultrafast gain recovery in InGaAs quantum dots

The application of quantum dot (QD) semiconductor optical amplifiers (SOAs) in above 100-Gbit Ethernet networks demands an ultrafast gain recovery on time scales similar to that of the input pulse approximately 100 GHz repetition frequency. Microscopic scattering processes have to act at shortest po...

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Bibliographic Details
Published in:Physical review letters 2008-12, Vol.101 (25), p.256803-256803, Article 256803
Main Authors: Gomis-Bresco, J, Dommers, S, Temnov, V V, Woggon, U, Laemmlin, M, Bimberg, D, Malic, E, Richter, M, Schöll, E, Knorr, A
Format: Article
Language:English
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Summary:The application of quantum dot (QD) semiconductor optical amplifiers (SOAs) in above 100-Gbit Ethernet networks demands an ultrafast gain recovery on time scales similar to that of the input pulse approximately 100 GHz repetition frequency. Microscopic scattering processes have to act at shortest possible time scales and mechanisms speeding up the Coulomb scattering have to be explored, controlled, and exploited. We present a microscopic description of the gain recovery by coupled polarization- and population dynamics in a thermal nonequilibrium situation going beyond rate-equation models and discuss the limitations of Coulomb scattering between 0D and 2D-confined quantum states. An experiment is designed which demonstrates the control of gain recovery for THz pulse trains in InGaAs QD-based SOAs under powerful electrical injection.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.101.256803