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Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide
We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching Tc a reduction in the fluence required to drive the IM transition is observed, consistent with a softeni...
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Published in: | Physical review letters 2007-11, Vol.99 (22), p.226401-226401 |
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container_issue | 22 |
container_start_page | 226401 |
container_title | Physical review letters |
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creator | Hilton, D J Prasankumar, R P Fourmaux, S Cavalleri, A Brassard, D El Khakani, M A Kieffer, J C Taylor, A J Averitt, R D |
description | We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching Tc a reduction in the fluence required to drive the IM transition is observed, consistent with a softening of the insulating state due to an increasing metallic volume fraction (below the percolation limit). This phase coexistence facilitates the growth of a homogeneous metallic conducting phase following superheating via photoexcitation. A simple dynamic model using Bruggeman effective medium theory describes the observed initial condition sensitivity. |
doi_str_mv | 10.1103/PhysRevLett.99.226401 |
format | article |
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title | Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide |
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