Realization of Atomically Controlled Dopant Devices in Silicon

Molecular beam epitaxy and scanning tunneling microscopy (STM) patterning are combined to form highly doped, planar devices in silicon at the atomic level. The absolute device location is registered to microscopic markers (see image; scale bar: 50 μm) for the alignment of surface contacts, enabling...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2007-04, Vol.3 (4), p.563-567
Main Authors: Rueß, Frank J., Pok, Wilson, Reusch, Thilo C. G., Butcher, Matthew J., Goh, Kuan Eng J., Oberbeck, Lars, Scappucci, Giordano, Hamilton, Alex R., Simmons, Michelle Y.
Format: Article
Language:English
Subjects:
Carbon - chemistry
Crystallization
doping
Electric Conductivity
Electrons
Hydrogen - chemistry
Metal Nanoparticles - chemistry
Microscopy, Scanning Probe - methods
Microscopy, Scanning Tunneling
molecular beam epitaxy
nanostructures
Nanostructures - chemistry
Nanotechnology - methods
scanning probe microscopy
silicon
Silicon - chemistry
Temperature
Time Factors
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Summary:Molecular beam epitaxy and scanning tunneling microscopy (STM) patterning are combined to form highly doped, planar devices in silicon at the atomic level. The absolute device location is registered to microscopic markers (see image; scale bar: 50 μm) for the alignment of surface contacts, enabling the correlation of the electrical properties of atomically controlled devices such as nanowires, tunnel junctions, and nanodots to the dopant location, monitored using high‐resolution STM techniques.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200600680