ZnO-Nanowire-Inserted GaN/ZnO Heterojunction Light-Emitting Diodes

Out of the blue: Light‐emitting diodes were obtained by fabricating p+‐GaN film/n‐ZnO nanowire array/n+‐ZnO film structures (see figure). Blue electroluminescence (EL) emission was observed from the nanowire‐inserted heterojunction diodes under forward bias. These diodes exhibited improved EL emissi...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2007-04, Vol.3 (4), p.568-572
Main Authors: Jeong, Min-Chang, Oh, Byeong-Yun, Ham, Moon-Ho, Lee, Sang-Won, Myoung, Jae-Min
Format: Article
Language:English
Subjects:
Electric Conductivity
Electronics
Gallium - chemistry
heterojunctions
interfaces
LEDs
Magnesium - chemistry
Metal Nanoparticles - chemistry
Metals
Microscopy, Electron, Scanning
Nanostructures - chemistry
nanowires
Nanowires - chemistry
Photochemistry - methods
Temperature
zinc oxide
Zinc Oxide - chemistry
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Summary:Out of the blue: Light‐emitting diodes were obtained by fabricating p+‐GaN film/n‐ZnO nanowire array/n+‐ZnO film structures (see figure). Blue electroluminescence (EL) emission was observed from the nanowire‐inserted heterojunction diodes under forward bias. These diodes exhibited improved EL emission and injection current compared to those of film‐based heterojunction diodes.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200600479