Ion Gel Gated Polymer Thin-Film Transistors

We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm2 at 10 Hz and 2 μF/cm2 at 1 kHz. In addition, the polarization response time of the ion...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2007-04, Vol.129 (15), p.4532-4533
Main Authors: Lee, Jiyoul, Panzer, Matthew J, He, Yiyong, Lodge, Timothy P, Frisbie, C. Daniel
Format: Article
Language:English
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Summary:We have fabricated polymer semiconductor thin-film transistors using an ion gel (ionic liquid plus triblock copolymer) as the gate dielectric layer. The gate capacitance of the ion gel can be as large as 40 μF/cm2 at 10 Hz and 2 μF/cm2 at 1 kHz. In addition, the polarization response time of the ion gel is much faster than previously tested solid polymer electrolytes, allowing the ion gel gated transistors to operate at higher frequencies (>100 Hz).
ISSN:0002-7863
1520-5126
DOI:10.1021/ja070875e