Electrical spin injection and threshold reduction in a semiconductor laser

A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at...

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Bibliographic Details
Published in:Physical review letters 2007-04, Vol.98 (14), p.146603-146603, Article 146603
Main Authors: Holub, M, Shin, J, Saha, D, Bhattacharya, P
Format: Article
Language:English
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Summary:A spin-polarized vertical-cavity surface-emitting laser is demonstrated with electrical spin injection from an Fe/Al0.1Ga0.9As Schottky tunnel barrier. Laser operation with a spin-polarized current results in a maximum threshold current reduction of 11% and degree of circular polarization of 23% at 50 K. A cavity spin polarization of 16.8% is estimated from spin-dependent rate equation analysis of the observed threshold reduction.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.98.146603