Selective photon-stimulated desorption of hydrogen from GaAs surfaces

Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (...

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Bibliographic Details
Published in:Physical review letters 2000-03, Vol.84 (10), p.2255-2258
Main Authors: Petravic, M, Deenapanray, P N, Comtet, G, Hellner, L, Dujardin, G, Usher, B F
Format: Article
Language:English
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Summary:Photon-stimulated desorption of H(+) from hydrogenated GaAs (110) and (100) surfaces was studied as a function of photon energy. Distinct peaks, observed around As 3d core-level binding energy for desorption from the GaAs (100) surface and in the As 3d and Ga 3p region for desorption from the GaAs (110) surface, show a striking similarity with the fine structure (spin-orbit splitting) measured in the photoemission from As 3d and Ga 3p levels. These results provide clear evidence for direct desorption processes and represent a basis for selective modification of hydrogenated GaAs surfaces.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.84.2255