Ultrafast dynamics of intersubband excitations in a quasi-two-dimensional hole gas

We present the first study of ultrafast hole dynamics after resonant intersubband excitation in a quasi-two-dimensional semiconductor. p-type Si0.5Ge 0.5/Si multiple quantum wells are studied in pump-probe experiments with 150 fs midinfrared pulses. Intersubband scattering from the second heavy-hole...

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Bibliographic Details
Published in:Physical review letters 2001-02, Vol.86 (6), p.1122-1125
Main Authors: Kaindl, R A, Wurm, M, Reimann, K, Woerner, M, Elsaesser, T, Miesner, C, Brunner, K, Abstreiter, G
Format: Article
Language:English
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Summary:We present the first study of ultrafast hole dynamics after resonant intersubband excitation in a quasi-two-dimensional semiconductor. p-type Si0.5Ge 0.5/Si multiple quantum wells are studied in pump-probe experiments with 150 fs midinfrared pulses. Intersubband scattering from the second heavy-hole back to the first heavy-hole subband occurs with a time constant of 250 fs, followed by intrasubband carrier heating within 1 ps. Such processes give rise to a strong reshaping of the intersubband absorption line, which is accounted for by calculations of the subband structure, optical spectra, and hole-phonon scattering rates.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.86.1122