"Metallic" and "insulating" behavior of the two-dimensional electron gas on a vicinal surface of Si MOSFET'S

The resistance R of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si (100) MOSFET's studied earlier. The low-temperature crossover from dR/dT0 ("metal") occurs at a low resistance of R(c)square approximately 0.04xh/e2. This crossover, w...

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Bibliographic Details
Published in:Physical review letters 2001-01, Vol.86 (2), p.272-275
Main Authors: Safonov, S S, Roshko, S H, Savchenko, A K, Pogosov, A G, Kvon, Z D
Format: Article
Language:English
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Summary:The resistance R of the 2DEG on the vicinal Si surface shows unusual behavior which is very different from that in Si (100) MOSFET's studied earlier. The low-temperature crossover from dR/dT0 ("metal") occurs at a low resistance of R(c)square approximately 0.04xh/e2. This crossover, which we attribute to the existence of a narrow impurity band at the interface, is accompanied by a distinct hysteresis in the resistance. At higher temperatures, another change in the sign of dR/dT is seen. We describe it by temperature dependent impurity scattering of the 2DEG near the transition from the degenerate to nondegenerate state.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.86.272