Semiconductor laser with extended cavity and intracavity atomic filter

We report on peculiar dynamic features of laser oscillation in a cavity with a semiconductor junction as the gain medium and an intracavity atomic absorber. The output face of the semiconductor is antireflection coated, and lasing action is achieved by using a diffraction grating to close the laser...

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Bibliographic Details
Published in:Optics letters 2007-07, Vol.32 (13), p.1869-1871
Main Authors: BARBOSA, L. B, SORRENTINO, T, FERREIRA, D. N, REYES ARDILA, D, CHEVROLLIER, M, ORIA, M
Format: Article
Language:English
Subjects:
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Lasers
Nonlinear optics
Optical bistability, multistability and switching, including local field effects
Optics
Physics
Semiconductor lasers
laser diodes
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Summary:We report on peculiar dynamic features of laser oscillation in a cavity with a semiconductor junction as the gain medium and an intracavity atomic absorber. The output face of the semiconductor is antireflection coated, and lasing action is achieved by using a diffraction grating to close the laser cavity. The spectral analysis of the laser emission evidences a stable emission with narrow linewidth when the oscillating frequency is resonant with the atomic absorber. We also observe frequency bistability and instability. The change between these regimes is controlled through the bias current in a very reproducible way.
ISSN:0146-9592
1539-4794
DOI:10.1364/OL.32.001869