Atomic scale oxidation of a complex system: O2/alpha-SiC(0001)-( 3 x 3)

The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through...

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Bibliographic Details
Published in:Physical review letters 2001-05, Vol.86 (19), p.4342-4345
Main Authors: Amy, F, Enriquez, H, Soukiassian, P, Storino, P F, Chabal, Y J, Mayne, A J, Dujardin, G, Hwu, Y K, Brylinski, C
Format: Article
Language:English
Online Access:Get full text
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Summary:The atomic scale oxidation of the alpha-SiC(0001)-(3 x 3) surface is investigated by atom-resolved scanning tunneling microscopy, core level synchrotron radiation based photoemission spectroscopy, and infrared absorption spectroscopy. The results reveal that the initial oxidation takes place through the relaxation of lower layers, away from the surface dangling bond, in sharp contrast to silicon oxidation.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.86.4342