Chemical Nucleation for CVD Diamond Growth

A new nucleation method to form diamond by chemically pretreating silicon (111) surfaces is reported. The nucleation consists of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Then low-pressure diamond growth was performed for 2 h via microwave plasma CVD in a tubular d...

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Bibliographic Details
Published in:Journal of the American Chemical Society 2001-03, Vol.123 (10), p.2271-2274
Main Authors: Giraud, Anne, Jenny, Titus, Leroy, Eric, Küttel, Olivier M, Schlapbach, Louis, Vanelle, Patrice, Giraud, Luc
Format: Article
Language:English
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Summary:A new nucleation method to form diamond by chemically pretreating silicon (111) surfaces is reported. The nucleation consists of binding covalently 2,2-divinyladamantane molecules on the silicon substrate. Then low-pressure diamond growth was performed for 2 h via microwave plasma CVD in a tubular deposition system. The resulting diamond layers presented a good cristallinity and the Raman spectra showed a single very sharp peak at 1331 cm-1, indicating high-quality diamonds.
ISSN:0002-7863
1520-5126
DOI:10.1021/ja002724g