Dynamic chemical mapping near a Si/SiO2 interface at elevated temperatures using plasmon‐loss images

Plasmon‐loss imaging was applied to chemical mapping during an in‐situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a co...

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Bibliographic Details
Published in:Journal of microscopy (Oxford) 2001-07, Vol.203 (1), p.12-16
Main Authors: Sasaki, K., Tsukimoto, S., Konno, M., Kamino, T., Saka, H.
Format: Article
Language:English
Subjects:
Electron energy loss spectroscopy
in‐situ chemical mapping
plasmon‐loss
SiO2 interface
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Summary:Plasmon‐loss imaging was applied to chemical mapping during an in‐situ heating experiment. The technique was applied to observation of vibration of a Si/SiO2 interface which took place during reduction of SiO2 at high temperature. The chemical maps of Si and SiO2 were recorded dynamically using a conventional TV‐VTR system at a time resolution of 1/30 s.
ISSN:0022-2720
1365-2818
DOI:10.1046/j.1365-2818.2001.00911.x