Cross-section preparation for transmission electron microscopy of phases and interfaces in C/BN heterostructures

A technique is described for the preparation of transmission electron microscopy cross-sectional samples of pyrolytical carbon layers deposited on polycrystalline boron nitride substrates. To solve the problem of different abrasion rates of C and BN a filler material, Si wafers, has been bonded to b...

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Bibliographic Details
Published in:Micron (Oxford, England : 1993) England : 1993), 2002, Vol.33 (1), p.105-109
Main Authors: Reznik, B., Kalhöfer, S.
Format: Article
Language:English
Subjects:
Boron nitride
Carbon
Color
Silicon
TEM sample preparation
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Summary:A technique is described for the preparation of transmission electron microscopy cross-sectional samples of pyrolytical carbon layers deposited on polycrystalline boron nitride substrates. To solve the problem of different abrasion rates of C and BN a filler material, Si wafers, has been bonded to both sides of the pre-thinned BN substrate. Correspondence between color and thickness of Si wafers facilitates controlled sample thickness reduction during dimpling. The samples prepared by this technique even without ion milling are thin enough for HRTEM studies.
ISSN:0968-4328
1878-4291
DOI:10.1016/S0968-4328(00)00063-9