Changing the diffusion mechanism of Ge-Si dimers on Si(001) using an electric field

We change the diffusion mechanism of adsorbed Ge-Si dimers on Si(001) using the electric field of a scanning tunneling microscope tip. By comparing the measured field dependence with first-principles calculations we conclude that, in negative field, i.e., when electrons are attracted towards the vac...

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Bibliographic Details
Published in:Physical review letters 2003-11, Vol.91 (20), p.206104-206104, Article 206104
Main Authors: Sanders, L M, Stumpf, R, Mattsson, T R, Swartzentruber, B S
Format: Article
Language:English
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Summary:We change the diffusion mechanism of adsorbed Ge-Si dimers on Si(001) using the electric field of a scanning tunneling microscope tip. By comparing the measured field dependence with first-principles calculations we conclude that, in negative field, i.e., when electrons are attracted towards the vacuum, the dimer diffuses as a unit, rotating as it translates, whereas, in positive field the dimer bond is substantially stretched at the transition state as it slides along the substrate. Furthermore, the active mechanism in positive fields facilitates intermixing of Ge in the Si lattice, whereas intermixing is suppressed in negative fields.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.91.206104