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Mechanism of Electron Conduction in Self-Assembled Alkanethiol Monolayer Devices
: Electron tunneling through self‐assembled monolayers (SAMs) of alkanethiols was investigated using nanometer scale devices that allow temperature‐dependent current‐voltage, I(V, T), measurements. The I(V, T) measurement results show, for the first time, temperature‐independent electron transport c...
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Published in: | Annals of the New York Academy of Sciences 2003-12, Vol.1006 (1), p.21-35 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | : Electron tunneling through self‐assembled monolayers (SAMs) of alkanethiols was investigated using nanometer scale devices that allow temperature‐dependent current‐voltage, I(V, T), measurements. The I(V, T) measurement results show, for the first time, temperature‐independent electron transport characteristics, proving direct tunneling as the transport mechanism in alkanethiol SAMs. The measured tunneling currents can be fitted with theoretical calculations using the modified rectangular barrier model of direct tunneling with a barrier height ΦB= 1.42 ± 0.04 eV and a non‐ideal barrier factor α= 0.65 ± 0.01 (that may correspond to effective mass of 0.42 m). From the length‐dependent conduction measurement on different alkanethiols of various lengths, the tunneling current exhibits exponential dependence on the molecular length, d, as I ∝ exp(−βd), where β is a decay coefficient that was found to be bias‐dependent and agrees with the existing theory of direct tunneling. A zero field decay coefficient β0 of 0.79 ± 0.01 Å−1 was obtained. |
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ISSN: | 0077-8923 1749-6632 |
DOI: | 10.1196/annals.1292.001 |