Inorganic Semiconductor Nanowires: Rational Growth, Assembly, and Novel Properties

• Published in: Chemistry : a European journal 2002-03, Vol.8 (6), p.1260-1268
• Main Authors: Wu, Yiying, Yan, Haoquan, Huang, Michael, Messer, Benjamin, Song, Jae Hee, Yang, Peidong
• Format: Article
• Language: English
• Subjects: crystal growth; nanostructures; nanotechnology; nanowires; self-assembly
• ISSN: 0947-6539; 1521-3765
• DOI: 10.1002/1521-3765(20020315)8:6<1260::AID-CHEM1260>3.0.CO;2-Q

Rationally controlled growth of inorganic semiconductor nanowires is important for their applications in nanoscale electronics and photonics. In this article, we discuss the rational growth, physical properties, and integration of nanowires based on the results from the authors' laboratory. The composition, diameter, growth position, and orientation of the nanowires are controlled based on the vapor–solid–liquid (VLS) crystal growth mechanism. The thermal stability and optical properties of these semiconductor nanowires are investigated. Particularly, ZnO nanowires with well‐defined end surfaces can function as room‐temperature ultraviolet nanolasers. In addition, a novel microfluidic‐assisted nanowire integration (MANI) process was developed for the hierarchical assembly of nanowire building blocks into functional devices and systems. By using a vapor–liquid–solid crystal growth mechanism, inorganic semiconductor nanowires can be readily synthesized with controlled composition, size, and orientation (see scheme). These nanowires have unique thermal, electrical, and optical properties, which give promise to their potential applications in nanoscale optoelectronics.