In Spite of Recent Doubts Carrier Multiplication Does Occur in PbSe Nanocrystals

Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doub...

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Bibliographic Details
Published in:Nano letters 2008-06, Vol.8 (6), p.1713-1718
Main Authors: Trinh, M. Tuan, Houtepen, Arjan J, Schins, Juleon M, Hanrath, Tobias, Piris, Jorge, Knulst, Walter, Goossens, Albert P. L. M, Siebbeles, Laurens D. A
Format: Article
Language:English
Subjects:
Computer Simulation
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Crystallization - methods
Electron Transport
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Lead - chemistry
Macromolecular Substances - chemistry
Materials science
Materials Testing
Models, Chemical
Molecular Conformation
Nanocrystalline materials
Nanoscale materials and structures: fabrication and characterization
Nanostructures - chemistry
Nanostructures - ultrastructure
Nanotechnology - methods
Particle Size
Physics
Selenium Compounds - chemistry
Surface Properties
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Summary:Efficient carrier multiplication has been reported for several semiconductor nanocrystals: PbSe, PbS, PbTe, CdSe, InAs, and Si. Some of these reports have been challenged by studies claiming that carrier multiplication does not occur in CdSe, CdTe, and InAs nanocrystals, thus raising legitimate doubts concerning the occurrence of carrier multiplication in the remaining materials. Here, conclusive evidence is given for its occurrence in PbSe nanocrystals using femtosecond transient photobleaching. In addition, it is shown that a correct determination of carrier-multiplication efficiency requires spectral integration over the photobleach feature. The carrier multiplication efficiency we obtain is significantly lower than what has been reported previously, and it remains an open question whether it is higher in nanocrystals than it is in bulk semiconductors.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0807225