Loading…
Direct role of hydrogen in the Staebler-Wronski effect in hydrogenated amorphous silicon
We report a hydrogen-related defect that establishes the direct role of hydrogen in stabilizing the silicon dangling bonds created in the Staebler-Wronski effect in hydrogenated amorphous silicon. A specific NMR signal due to paired hydrogen atoms occurs only after optical excitation, exists at an i...
Saved in:
Published in: | Physical review letters 2002-07, Vol.89 (1), p.015502-015502, Article 015502 |
---|---|
Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Summary: | We report a hydrogen-related defect that establishes the direct role of hydrogen in stabilizing the silicon dangling bonds created in the Staebler-Wronski effect in hydrogenated amorphous silicon. A specific NMR signal due to paired hydrogen atoms occurs only after optical excitation, exists at an intensity that is consistent with the density of optically induced silicon dangling bonds, and anneals at temperatures that are consistent with the annealing of the optically induced silicon dangling bonds. At this defect the hydrogen atoms are 2.3+/-0.2 A apart. |
---|---|
ISSN: | 0031-9007 1079-7114 |
DOI: | 10.1103/PhysRevLett.89.015502 |