Dissociation of a product of a surface reaction in the gas phase: XeF2 reaction with Si

Xenon difluoride interacts with Si(100)2 x 1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atom...

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Bibliographic Details
Published in:Physical review letters 2004-05, Vol.92 (18), p.188302-188302
Main Authors: Hefty, R C, Holt, J R, Tate, M R, Gosalvez, D B, Bertino, M F, Ceyer, S T
Format: Article
Language:English
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Summary:Xenon difluoride interacts with Si(100)2 x 1 by atom abstraction, whereby a dangling bond abstracts a F atom from XeF2, scattering the complementary XeF. Partitioning of the reaction exothermicity produces sufficient XeF rovibrational excitation for dissociation to occur. The resulting F and Xe atoms are shown to arise from dissociation of XeF in the gas phase by demonstrating that the angle-resolved velocity distributions of F, Xe, and XeF conserve momentum, energy, and mass. This experiment documents the first observation of dissociation of a surface reaction product in the gas phase.
ISSN:0031-9007
DOI:10.1103/PhysRevLett.92.188302