Optimization of photoconducting receivers for THz spectroscopy

We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average pow...

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Bibliographic Details
Published in:Physics in medicine & biology 2002-11, Vol.47 (21), p.3705-3710
Main Authors: Andrews, S R, Armitage, A, Huggard, P G, Hussain, A
Format: Article
Language:English
Subjects:
Biological and medical sciences
Electric Conductivity
Electromagnetic Phenomena - instrumentation
Equipment Design
Equipment Failure Analysis - methods
Lasers
Medical sciences
Microwaves
Optics and Photonics - instrumentation
Quality Control
Semiconductors
Sensitivity and Specificity
Spectrum Analysis
Stochastic Processes
Transducers
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Summary:We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average power. The 10% amplitude system bandwidth for 10 microm (50 microm) dipole receivers is 3 THz (1.5 THz). A dynamic range of 4 x 10(5) Hz(-1/2) is achieved using a 10 microm dipole GaAs receiver and 2 x 10(6) Hz(-1/2) using a 50 microm dipole for a total laser power of 110 mW and THz beam power of 20 microW. The dynamic range achieved with comparable silicon receivers is a factor of 2 smaller.
ISSN:0031-9155
1361-6560
DOI:10.1088/0031-9155/47/21/305