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Optimization of photoconducting receivers for THz spectroscopy

We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average pow...

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Published in:Physics in medicine & biology 2002-11, Vol.47 (21), p.3705-3710
Main Authors: Andrews, S R, Armitage, A, Huggard, P G, Hussain, A
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container_title Physics in medicine & biology
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creator Andrews, S R
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Hussain, A
description We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average power. The 10% amplitude system bandwidth for 10 microm (50 microm) dipole receivers is 3 THz (1.5 THz). A dynamic range of 4 x 10(5) Hz(-1/2) is achieved using a 10 microm dipole GaAs receiver and 2 x 10(6) Hz(-1/2) using a 50 microm dipole for a total laser power of 110 mW and THz beam power of 20 microW. The dynamic range achieved with comparable silicon receivers is a factor of 2 smaller.
doi_str_mv 10.1088/0031-9155/47/21/305
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source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects Biological and medical sciences
Electric Conductivity
Electromagnetic Phenomena - instrumentation
Equipment Design
Equipment Failure Analysis - methods
Lasers
Medical sciences
Microwaves
Optics and Photonics - instrumentation
Quality Control
Semiconductors
Sensitivity and Specificity
Spectrum Analysis
Stochastic Processes
Transducers
title Optimization of photoconducting receivers for THz spectroscopy
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