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Optimization of photoconducting receivers for THz spectroscopy
We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average pow...
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Published in: | Physics in medicine & biology 2002-11, Vol.47 (21), p.3705-3710 |
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container_end_page | 3710 |
container_issue | 21 |
container_start_page | 3705 |
container_title | Physics in medicine & biology |
container_volume | 47 |
creator | Andrews, S R Armitage, A Huggard, P G Hussain, A |
description | We have studied the sensitivity and noise of optically gated dipole receivers made from ion implanted Si and GaAs in an optimized time domain THz spectrometer. The spectrometer uses a room temperature, dc biased, semi-insulating GaAs stripline source capable of generating up to 30 microW average power. The 10% amplitude system bandwidth for 10 microm (50 microm) dipole receivers is 3 THz (1.5 THz). A dynamic range of 4 x 10(5) Hz(-1/2) is achieved using a 10 microm dipole GaAs receiver and 2 x 10(6) Hz(-1/2) using a 50 microm dipole for a total laser power of 110 mW and THz beam power of 20 microW. The dynamic range achieved with comparable silicon receivers is a factor of 2 smaller. |
doi_str_mv | 10.1088/0031-9155/47/21/305 |
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subjects | Biological and medical sciences Electric Conductivity Electromagnetic Phenomena - instrumentation Equipment Design Equipment Failure Analysis - methods Lasers Medical sciences Microwaves Optics and Photonics - instrumentation Quality Control Semiconductors Sensitivity and Specificity Spectrum Analysis Stochastic Processes Transducers |
title | Optimization of photoconducting receivers for THz spectroscopy |
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