Optically induced deexcitation of rare-Earth ions in a semiconductor matrix

We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using two-color spectroscopy in the visible and the midinfrared regions (with a free-electron laser) we demonstrate reversal of the most important step in...

Full description

Saved in:
Bibliographic Details
Published in:Physical review letters 2002-11, Vol.89 (22), p.227401-227401, Article 227401
Main Authors: Klik, M A J, Gregorkiewicz, T, Bradley, I V, Wells, J-P R
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We report on verification of the proposed energy transfer mechanism responsible for photoluminescence of rare earth (RE) ions in semiconductors. Using two-color spectroscopy in the visible and the midinfrared regions (with a free-electron laser) we demonstrate reversal of the most important step in the excitation process. In that way, formation of the intermediate state bridging atomic states of the RE ion core and extended orbitals of a semiconducting host is explicitly confirmed and its characteristic energy spectroscopically determined. The study is performed for InP:Yb. It is argued, however, that the conclusions are valid for all semiconductor:RE systems, including the notorious Si:Er.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.89.227401