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Dependence of sonochemical parameters on the platinization of rutile titania – An observation of a pronounced increase in photocatalytic efficiencies

Using a standing wave sonochemical reactor (SWSR), the influences of parameters of ultrasonic power input, sonication time, sonication temperature and the amount of propanol (which generates the reducing radicals) were systemically investigated to ascertain and optimize the best conditions for the s...

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Published in:Ultrasonics sonochemistry 2010-03, Vol.17 (3), p.621-627
Main Authors: Sivakumar, Manickam, Towata, Atsuya, Yasui, Kyuichi, Tuziuti, Toru, Kozuka, Teruyuki, Iida, Yasuo
Format: Article
Language:English
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Summary:Using a standing wave sonochemical reactor (SWSR), the influences of parameters of ultrasonic power input, sonication time, sonication temperature and the amount of propanol (which generates the reducing radicals) were systemically investigated to ascertain and optimize the best conditions for the sonochemical reduction of Pt from its precursor hexachloroplatinic acid and then its deposition on rutile TiO 2 (platinization of rutile titania) catalysts. Catalytic activity of the prepared platinized catalysts was tested in the reaction of methyl orange degradation. The results of photocatalytic activity study in the degradation of methyl orange further demonstrate that sonochemically as-prepared Pt/TiO 2 catalysts show a pronounced increase (∼2 times) in photodegradation, even with a deposition of small amounts of platinum (1.4 wt.%), as compared to the unsupported or naked rutile titania. Although there are various parameters that influence the sonochemical platinization of rutile titania, the present optimization results clearly indicate that the best photocatalytic degradation of methyl orange can be obtained when the experimental conditions of the preparation were with an input power of 50 W, an initial hexachloroplatinic acid volume of 70 ml (which results into 1.4 wt.% Pt on TiO 2), sonication time of 90 min, 0.18 g of propanol and a temperature of 10 °C were adopted. The method of ultrasound application to prepare metal supported semiconductors has many advantages such as convenience, safety and high efficiency. Furthermore, it is hopeful that this optimization study can also be extended to the generation of similar metal supported semiconductors.
ISSN:1350-4177
1873-2828
DOI:10.1016/j.ultsonch.2009.11.013