Quantum efficiency stability of silicon photodiodes

The stability of the quantum efficiency of inversion layer, phosphorus-diffused (n on p), and boron-diffused (p on n) photodiodes has been investigated. Unsatisfactory silicon-silicon dioxide interfaces, latent recombination centers in the diffused layers, and moisture absorption by the device were...

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Bibliographic Details
Published in:Applied optics (2004) 1987-12, Vol.26 (24), p.5284-5290
Main Authors: Korde, R, Geist, J
Format: Article
Language:English
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Summary:The stability of the quantum efficiency of inversion layer, phosphorus-diffused (n on p), and boron-diffused (p on n) photodiodes has been investigated. Unsatisfactory silicon-silicon dioxide interfaces, latent recombination centers in the diffused layers, and moisture absorption by the device were identified as possible causes of instability. Diodes were fabricated using processes in which these sources of instability were carefully controlled. The resulting diodes were subjected to various accelerated aging tests, and the external quantum efficiency of the diodes was monitored during the tests. Diodes made by older procedures, in which some important parameters affecting stability were not controlled, were included in the study for comparison. The major result of this work is the demonstration that n on p photodiodes are inherently more stable than p on n types in the ultraviolet and blue spectral regions, but that stable p on n devices can also be produced with sufficient care.
ISSN:1559-128X
DOI:10.1364/AO.26.005284