Room-Temperature, Electric Field-Induced Creation of Stable Devices in CulnSe2 Crystals

Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with elec...

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Bibliographic Details
Published in:Science (American Association for the Advancement of Science) 1992-10, Vol.258 (5080), p.271-274
Main Authors: Cahen, D, Gilet, J M, Schmitz, C, Chernyak, L, Gartsman, K, Jakubowicz, A
Format: Article
Language:English
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Summary:Multiple-junction structures were formed, on a microscopic scale, at room temperature, by the application of a strong electric field across originally homogeneous crystals of the ternary chalcopyrite semiconductor CulnSe(2). After removal of the electric field, the structures were examined with electron beam-induced current microscopy and their current-voltage characteristics were measured. Bipolar transistor action was observed, indicating that sharp bulk junctions can form in this way at low ambient temperatures. The devices are stable under normal (low-voltage) operating conditions. Possible causes for this effect, including electromigration and electric field-assisted defect reactions, are suggested.
ISSN:0036-8075
DOI:10.1126/science.258.5080.271