Structural Characterization of Multi-Quantum Wells in Electroabsorption-Modulated Lasers by using Synchrotron Radiation Micrometer-Beams

Advanced optoelectronic devices require monolithic integration of different functions at chip level. This is the case of multi‐quantum well (MQW) electro absorption modulated lasers (EMLs) realized by using the selective area growth (SAG) technique, and which can be employed in long‐distance, high‐f...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2010-05, Vol.22 (18), p.2050-2054
Main Authors: Mino, Lorenzo, Gianolio, Diego, Agostini, Giovanni, Piovano, Andrea, Truccato, Marco, Agostino, Angelo, Cagliero, Stefano, Martinez-Criado, Gema, Codato, Simone, Lamberti, Carlo
Format: Article
Language:English
Subjects:
Absorption
electroabsorption-modulated lasers
III-V Heterostructures
Lasers
multi-quantum well lasers
Quantum Theory
selective area growth
Silicon Dioxide - chemistry
space-resolved characterization
Synchrotrons
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Summary:Advanced optoelectronic devices require monolithic integration of different functions at chip level. This is the case of multi‐quantum well (MQW) electro absorption modulated lasers (EMLs) realized by using the selective area growth (SAG) technique, and which can be employed in long‐distance, high‐frequency optical fiber communication applications. We demonstrate that a micrometer‐resolved X‐ray beam available at third‐generation synchrotron radiation sources allows direct measurement of determinant structural parameters of MQW EML structures.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.200903407