Silicon nitride thin films by low voltage reactive ion plating: optical properties and composition

Silicon nitride films were synthesized in a Balzers BAP 800 coating plant by low voltage reactive ion plating. Transparent, stoichiometric films free of hydrogen, oxygen, argon, and heavy metals were obtained. The properties of the silicon nitride films were investigated in terms of optical constant...

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Bibliographic Details
Published in:Applied optics (2004) 1989-10, Vol.28 (20), p.4436-4441
Main Authors: Bovard, B G, Ramm, J, Hora, R, Hanselmann, F
Format: Article
Language:English
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Summary:Silicon nitride films were synthesized in a Balzers BAP 800 coating plant by low voltage reactive ion plating. Transparent, stoichiometric films free of hydrogen, oxygen, argon, and heavy metals were obtained. The properties of the silicon nitride films were investigated in terms of optical constants, chemical composition, and hydrogen content.
ISSN:1559-128X
DOI:10.1364/AO.28.004436