A hybrid AlGaInAs-silicon evanescent preamplifier and photodetector

We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide...

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Bibliographic Details
Published in:Optics express 2007-10, Vol.15 (21), p.13539-13546
Main Authors: Park, Hyundai, Kuo, Ying-Hao, Fang, Alexander W, Jones, Richard, Cohen, Oded, Paniccia, Mario J, Bowers, John E
Format: Article
Language:English
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Summary:We report the integration of a hybrid silicon evanescent waveguide photodetector with a hybrid silicon evanescent optical amplifier. The device operates at 1550 nm with a responsivity of 5.7 A/W and a receiver sensitivity of -17.5 dBm at 2.5 Gb/s. The transition between the passive silicon waveguide and the hybrid waveguide of the amplifier is tapered to increase coupling efficiency and to minimize reflections.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.15.013539