Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device...

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Bibliographic Details
Published in:Applied optics (2004) 2000-12, Vol.39 (36), p.6818-6829
Main Authors: Hiskett, P A, Buller, G S, Loudon, A Y, Smith, J M, Gontijo, I, Walker, A C, Townsend, P D, Robertson, M J
Format: Article
Language:English
Online Access:Get full text
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Summary:The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.
ISSN:1559-128X