Damping of exciton Rabi rotations by acoustic phonons in optically excited InGaAs/GaAs quantum dots

We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the grou...

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Bibliographic Details
Published in:Physical review letters 2010-01, Vol.104 (1), p.017402-017402, Article 017402
Main Authors: Ramsay, A J, Gopal, Achanta Venu, Gauger, E M, Nazir, A, Lovett, B W, Fox, A M, Skolnick, M S
Format: Article
Language:English
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Summary:We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.
ISSN:0031-9007
1079-7114
DOI:10.1103/PhysRevLett.104.017402