Charge Noise in Graphene Transistors

We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge’s empirical relation fails to describe the data. At low carrier density, the noise can be attributed to fluctuatin...

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Bibliographic Details
Published in:Nano letters 2010-05, Vol.10 (5), p.1563-1567
Main Authors: Heller, Iddo, Chatoor, Sohail, Männik, Jaan, Zevenbergen, Marcel A. G, Oostinga, Jeroen B, Morpurgo, Alberto F, Dekker, Cees, Lemay, Serge G
Format: Article
Language:English
Subjects:
Applied sciences
Computer Simulation
Cross-disciplinary physics: materials science
rheology
Electronics
Equipment Design
Equipment Failure Analysis
Exact sciences and technology
Fullerenes and related materials
diamonds, graphite
Graphite - chemistry
Materials science
Models, Theoretical
Molecular electronics, nanoelectronics
Nanotechnology - instrumentation
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Specific materials
Transistors, Electronic
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Summary:We report an experimental study of 1/f noise in liquid-gated graphene transistors. We show that the gate dependence of the noise is well described by a charge-noise model, whereas Hooge’s empirical relation fails to describe the data. At low carrier density, the noise can be attributed to fluctuating charges in close proximity to the graphene, while at high carrier density it is consistent with noise due to scattering in the channel. The charge noise power scales inversely with the device area, and bilayer devices exhibit lower noise than single-layer devices. In air, the observed noise is also consistent with the charge-noise model.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl903665g