25Gb/s hybrid silicon switch using a capacitively loaded traveling wave electrode

We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.

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Bibliographic Details
Published in:Optics express 2010-01, Vol.18 (2), p.1070-1075
Main Authors: Chen, Hui-Wen, Kuo, Ying-hao, Bowers, John E
Format: Article
Language:English
Subjects:
Electric Capacitance
Electrodes
Equipment Design
Equipment Failure Analysis
Microwaves
Optical Devices
Refractometry - instrumentation
Signal Processing, Computer-Assisted - instrumentation
Telecommunications - instrumentation
Transducers
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Description
Summary:We demonstrate a hybrid silicon modulator and switch operating up to 25 Gb/s with over 10 dB extinction ratio. The modulator has voltage-length product of 2.4 V-mm while the switch has switch time less than 35 ps and crosstalk smaller than -12 dB.
ISSN:1094-4087
1094-4087
DOI:10.1364/OE.18.001070