Facile Chemical Solution Deposition of High-Mobility Epitaxial Germanium Films on Silicon

Getting a move on: A facile chemical solution deposition method is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 cm2 V−1 s−1 for a carrier concentration of 3.45×1019 cm−3 at room temperature....

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Bibliographic Details
Published in:Angewandte Chemie International Edition 2010-03, Vol.49 (10), p.1782-1785
Main Authors: Zou, Guifu, Luo, Hongmei, Ronning, Filip, Sun, Baoquan, McCleskey, Thomas M., Burrell, Anthony K., Bauer, Eve, Jia, Q. X.
Format: Article
Language:English
Subjects:
germanium
mobility
solution deposition
thin films
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Summary:Getting a move on: A facile chemical solution deposition method is used for the first time for the epitaxial growth of germanium on an silicon substrate. The germanium films show Hall mobility values as high as 1700 cm2 V−1 s−1 for a carrier concentration of 3.45×1019 cm−3 at room temperature.
ISSN:1433-7851
1521-3773
DOI:10.1002/anie.200905804