Probing Layer Number and Stacking Order of Few-Layer Graphene by Raman Spectroscopy

Layer number and stacking order of few‐layer graphene (FLG) are of particular interest since they directly determine the performance of graphene‐based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB‐stacked FLG f...

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Bibliographic Details
Published in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2010-01, Vol.6 (2), p.195-200
Main Authors: Hao, Yufeng, Wang, Yingying, Wang, Lei, Ni, Zhenhua, Wang, Ziqian, Wang, Rui, Koo, Chee Keong, Shen, Zexiang, Thong, John T. L.
Format: Article
Language:English
Subjects:
electronic structure
Electrons
graphene
Graphite - chemistry
Raman spectroscopy
Spectrum Analysis, Raman - methods
stacking
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Summary:Layer number and stacking order of few‐layer graphene (FLG) are of particular interest since they directly determine the performance of graphene‐based electronic devices. By analyzing Raman spectra and Raman images, quantitative indices are extracted to discriminate the thickness of AB‐stacked FLG from single‐ to five‐layer graphene; a few key spectral characteristics are also identified for FLG with misoriented stacking.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.200901173