InP/AlGaInP quantum dot semiconductor disk lasers for CW TEM00 emission at 716 - 755 nm

Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wa...

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Bibliographic Details
Published in:Optics express 2009-11, Vol.17 (24), p.21782-21787
Main Authors: Schlosser, Peter J, Hastie, Jennifer E, Calvez, Stephane, Krysa, Andrey B, Dawson, Martin D
Format: Article
Language:English
Subjects:
Aluminum - chemistry
Equipment Design
Gallium - chemistry
Indium - chemistry
Lasers, Semiconductor
Luminescence
Optics and Photonics
Phosphates - chemistry
Quantum Dots
Refractometry
Ultraviolet Rays
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Summary:Multiple layers of InP QDs, self-assembled during epitaxial growth, were incorporated into the active region of an (Al(x)Ga(1-x))(0.51)In(0.49)P based semiconductor disk laser with monolithic Al(x)Ga(1-x)As distributed Bragg reflector. Three gain structure samples were selected from the epitaxial wafer, bonded to single-crystal diamond heatspreaders and optically pumped at 532 nm within a high finesse external laser cavity. Laser emission with peak wavelengths at 716, 729, and 739 nm, respectively, was achieved from the three samples; the latter demonstrating tuning from 729 to 755 nm. Maximum continuous wave output power of 52 mW at 739 nm was achieved with 0.2% output coupling; the threshold and slope efficiency were 220 mW and 5.7% respectively.
ISSN:1094-4087
DOI:10.1364/OE.17.021782