High sensitivity operation of discrete solid state detectors at 4 K

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4-mum spectral range with a noise equivalent power (NEP) of ~10(-16) Hz(-1/2) for two of the types and potential...

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Bibliographic Details
Published in:Applied optics (2004) 1981-03, Vol.20 (5), p.814-818
Main Authors: Rieke, G H, Montgomery, E F, Lebofsky, M J, Eisenhardt, P R
Format: Article
Language:English
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Summary:Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4-mum spectral range with a noise equivalent power (NEP) of ~10(-16) Hz(-1/2) for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.
ISSN:1559-128X
DOI:10.1364/AO.20.000814