Designed Organophosphonate Self-Assembled Monolayers Enhance Device Performance of Pentacene-Based Organic Thin-Film Transistors

Excellent device characteristics are measured for a pentacene‐based thin film transistor where the SiO2 gate dielectric is terminated with a self‐assembled monolayer of 9,10‐dinaphthylanthracene‐2‐phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on...

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Bibliographic Details
Published in:Advanced materials (Weinheim) 2010-07, Vol.22 (28), p.3081-3085
Main Authors: Liao, Kung-Ching, Ismail, Ahmad G., Kreplak, Laurent, Schwartz, Jeffrey, Hill, Ian G.
Format: Article
Language:English
Subjects:
Electric Impedance
Naphthacenes - chemistry
Organic Thin-Film Transistors
Organophosphonates - chemistry
Pentacene
Self-Assembly
Silicon Dioxide - chemistry
Surface Modification
Surface Properties
Transistors, Electronic
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Summary:Excellent device characteristics are measured for a pentacene‐based thin film transistor where the SiO2 gate dielectric is terminated with a self‐assembled monolayer of 9,10‐dinaphthylanthracene‐2‐phosphonate in which calculated molecular spacings are about 0.7 nm. This creates channels that are on the order of the “thickness” of an aromatic π system, which could allow for intercalation of pentacene units, favoring a π‐stacking motif for this first pentacene layer.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201001310